IndiumV3, Chine, Analysis, bibRecord, 000292

Dopant-induced band filling and bandgap renormalization in CdO: In films

Identifieur interne : 000292 ( Chine/Analysis ); précédent : 000291; suivant : 000293

Dopant-induced band filling and bandgap renormalization in CdO: In films

Auteurs : RBID : Pascal:13-0243644

Descripteurs français

Pascal (Inist)
- Population niveau énergie, Bande interdite, Renormalisation, Densité porteur charge, Niveau Fermi, Matériau dopé, Addition indium, Oxyde de cadmium, Interaction électron ion, Valence, Effet de Burstein Moss, CdO, 7120.
Wicri :
- geographic : Valence (Drôme).

English descriptors

KwdEn :
- Burstein Moss effect, Cadmium oxide, Carrier density, Doped materials, Electron ion interaction, Energy gap, Energy level population, Fermi level, Indium additions, Renormalization, Valence.

Abstract

The effect of carrier concentration on the Fermi level and bandgap renormalization in over 30 indium-doped cadmium oxide (CdO: In) films with carrier concentrations ranging from 1 to 15 × 10²⁰ cm^-3 was studied using the two-band k . p model with electron-electron and electron-ion interactions. It is shown that the Tauc relation, which is based on parabolic valence and conduction bands, overestimates the optical bandgap in the CdO films. Theoretical calculations of the optical bandgap give good agreement with experiments by taking into account the Burstein-Moss effect for a nonparabolic conduction band and bandgap renormalization effects. The band filling and bandgap renormalization in these CdO: In films are about 0.5-1.2 eV and 0.1-0.3 eV, respectively.

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Le document en format XML

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<author><name>YUANKUN ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Composite Materials and Structures, Harbin Institute of Technology</s1>
<s2>Harbin 150080</s2>
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<country>République populaire de Chine</country>
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<author><name sortKey="Mendelsberg, Rueben J" uniqKey="Mendelsberg R">Rueben J. Mendelsberg</name>
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<s2>Berkeley, CA 94720</s2>
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<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA 94720</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Materials Science Division, Argonne National Laboratory</s1>
<s2>Argonne, IL 60439</s2>
<s3>USA</s3>
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<country>États-Unis</country>
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<author><name>JIAQI ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Composite Materials and Structures, Harbin Institute of Technology</s1>
<s2>Harbin 150080</s2>
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<author><name>JIECAI HAN</name>
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<author><name sortKey="Anders, Andre" uniqKey="Anders A">André Anders</name>
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<term>Energy gap</term>
<term>Energy level population</term>
<term>Fermi level</term>
<term>Indium additions</term>
<term>Renormalization</term>
<term>Valence</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Population niveau énergie</term>
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<term>Niveau Fermi</term>
<term>Matériau dopé</term>
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<term>Oxyde de cadmium</term>
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<front><div type="abstract" xml:lang="en">The effect of carrier concentration on the Fermi level and bandgap renormalization in over 30 indium-doped cadmium oxide (CdO: In) films with carrier concentrations ranging from 1 to 15 × 10<sup>20</sup>
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 cm<sup>-3</sup>
 was studied using the two-band k . p model with electron-electron and electron-ion interactions. It is shown that the Tauc relation, which is based on parabolic valence and conduction bands, overestimates the optical bandgap in the CdO films. Theoretical calculations of the optical bandgap give good agreement with experiments by taking into account the Burstein-Moss effect for a nonparabolic conduction band and bandgap renormalization effects. The band filling and bandgap renormalization in these CdO: In films are about 0.5-1.2 eV and 0.1-0.3 eV, respectively.</s0>
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Dopant-induced band filling and bandgap renormalization in CdO: In films

Dopant-induced band filling and bandgap renormalization in CdO: In films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

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Pour manipuler ce document sous Unix (Dilib)

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